| 发明名称 |
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY |
| 摘要 |
A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device. |
| 申请公布号 |
US2017104153(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201615389322 |
申请日期 |
2016.12.22 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Machkaoutsan Vladimir;Gottwald Matthias Georg;Badaroglu Mustafa;Kan Jimmy;Lee Kangho;Lu Yu;Park Chando |
| 分类号 |
H01L43/12;H01L43/02;H01L43/08;H01L27/22 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a magnetic tunnel junction (MTJ) device array including a first MTJ device and a second MTJ device, the method comprising:
performing a first etch, wherein the first etch forms a first magnetic layer of a first MTJ device and forms a second magnetic layer of a second MTJ device; and performing a second etch, wherein the second etch forms at least one layer of the first MTJ device and the second MTJ device, wherein the first etch is separate from the second etch. |
| 地址 |
San Diego CA US |
