| 发明名称 |
LIFTOFF PROCESS FOR EXFOLIATION OF THIN FILM PHOTOVOLTAIC DEVICES AND BACK CONTACT FORMATION |
| 摘要 |
A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer. |
| 申请公布号 |
US2017104113(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201514880808 |
申请日期 |
2015.10.12 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Haight Richard A.;Hannon James B.;Oida Satoshi |
| 分类号 |
H01L31/0224;H01L31/18;H01L31/032;H01L31/0392 |
主分类号 |
H01L31/0224 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a back contact on an absorber layer in a photovoltaic device, comprising:
forming a two dimensional material on a first substrate; growing an absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) over the first substrate on the two dimensional material; growing a buffer layer on the absorber layer on a side opposite the two dimensional material; exfoliating the absorber layer from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer; and depositing a back contact on the absorber layer. |
| 地址 |
Armonk NY US |
