发明名称 |
LIGHT-EMITTING DEVICE |
摘要 |
A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions. |
申请公布号 |
US2017104013(A1) |
申请公布日期 |
2017.04.13 |
申请号 |
US201615385157 |
申请日期 |
2016.12.20 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
MIYAKE Hiroyuki;KOEZUKA Junichi;JINTYOU Masami;SHIMA Yukinori;YAMAZAKI Shunpei |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting device comprising: a wiring;
a first transistor comprising a first semiconductor film, and a first gate electrode and a second gate electrode overlapping with each other with the first semiconductor film therebetween; a second transistor comprising a second semiconductor film; a first capacitor configured to hold a potential difference between one of a first source electrode and a first drain electrode of the first transistor and the first gate electrode; a second capacitor configured to hold a potential difference between the one of the first source electrode and the first drain electrode of the first transistor and the second gate electrode; and a light-emitting element supplied with drain current of the first transistor; wherein the second transistor is configured to control conduction between the second gate electrode and the wiring, and wherein a semiconductor film of each of the first transistor and the second transistor comprises a semiconductor region overlapping with a gate electrode and having a carrier density less than or equal to 1×1017/cm3. |
地址 |
Atsugi-shi JP |