SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

The present invention relates to a semiconductor structure and a method for forming the same. The method comprises steps of providing a substrate having a dummy gate, forming a source/drain epitaxy layer doped with deuterium at two sides of the dummy gate on the substrate through a process of chemical vapor deposition for epitaxy; removing the dummy gate and forming a gate structure having a gate oxide layer introducing the deuterium. Because the deuterium is introduced into the gate oxide layer, stable covalent bonds are formed at interface of the gate oxide layer to decrease the number of the dangling bonds. Also, recovery ability of devices when facing hot carrier effect may be improved, and influence of the hot carrier effect on the performance of the devices may be lowered.

主权项

1. A method for forming a semiconductor structure, comprising steps of:
providing a semiconductor substrate formed with at least one dummy gate; forming a source/drain epitaxy layer doped with deuterium atoms at the two sides of the dummy gate through a vapor phase epitaxy process; removing the dummy gate; and forming a gate structure comprising a gate oxide layer at the position where the dummy gate was formed, wherein the deuterium atoms enter the gate oxide layer.