| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF |
| 摘要 |
A semiconductor memory device includes a memory cell array including a plurality of memory cells, connecting circuits including pass transistors coupled between global word lines and the plurality of memory cells, an address decoder coupled to block word lines coupled to gates of the pass transistors and the global word lines, and a control logic controlling the address decoder and applying a voltage pulse to the global word lines and the block word lines according to an operation state of the semiconductor memory device. |
| 申请公布号 |
US2017103811(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201615060044 |
申请日期 |
2016.03.03 |
| 申请人 |
SK hynix Inc. |
发明人 |
LEE Hee Youl |
| 分类号 |
G11C16/08;G11C16/12 |
主分类号 |
G11C16/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
a memory cell array including a plurality of memory cells; connecting circuits including pass transistors coupled between global word lines and the plurality of memory cells; an address decoder coupled to block word lines coupled to gates of the pass transistors and the global word lines; and a control logic controlling the address decoder and applying a voltage pulse to the global word lines and the block word lines according to an operation state of the semiconductor memory device, wherein the control logic repeatedly applies the voltage pulse to at least one of the global word lines or the block word lines at each first reference time while the operation state of the semiconductor memory device is in a ready state. |
| 地址 |
Icheon-si Gyeonggi-do KR |
