发明名称 SOLID STATE STORAGE DEVICE AND DATA WRITING METHOD THEREOF
摘要 A data writing method for a solid state storage device includes following steps. A step (a) is performed to judge whether a shutdown command is issued from a host. In a step (b), if the solid state storage device confirms that the shutdown command is not issued from the host, plural program procedures are performed. Consequently, plural write data in a buffer are stored to a triple-level cell flash memory according to a program order. In a step (c), if the solid state storage device confirms that the shutdown command is issued from the host, plural redundant data are added to the plural write data, the write data are stored into the buffer, and the plural program procedures are performed. Consequently, the plural write data in the buffer are stored to the triple-level cell flash memory according to the program order.
申请公布号 US2017103806(A1) 申请公布日期 2017.04.13
申请号 US201614992285 申请日期 2016.01.11
申请人 Lite-On Electronics (Guangzhou) Limited ;LITE-ON TECHNOLOGY CORPORATION 发明人 Lee Ming-Hsuan;Chuang Sen-Ming;Liu Jen-Cheng
分类号 G11C11/56 主分类号 G11C11/56
代理机构 代理人
主权项 1. A data writing method for a solid state storage device, the data writing method comprising steps of: (a) judging whether a shutdown command is issued from a host; (b) if the shutdown command is not issued from the host, performing plural program procedures, so that plural write data in a buffer are stored to a flash memory according to a program order, wherein the flash memory stores more than 2 bits per cell; and (c) if the shutdown command is issued from the host, adding plural redundant data having specified pattern as write data into the buffer, and performing the plural program procedures, so that the write data that are not stored to the flash memory and the redundant data in the buffer are stored to the flash memory according to the program order.
地址 GUANGZHOU CN