SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

摘要

This invention provides a semiconductor structure and a forming method thereof. The method for forming the semiconductor structure comprises providing a substrate having a dummy gate; forming source-drain regions in the substrate located in the two sides of the dummy gate, wherein the source-drain region is doped with deuterium; removing the dummy gate; and forming a gate structure having a gate oxide layer in the location of the dummy gate, wherein the deuterium enters the gate oxide layer. In the obtained semiconductor structure, stable covalent bonds can be formed in the gate oxide layer interface because of the deuterium entry, thereby the problems of dangling bonds can be solved. Accordingly, the device recovery against hot carrier effect can be enhanced, and the affections of the device properties caused by hot carrier effect can be reduced.

主权项

1. A method for forming a semiconductor structure comprising:
providing a substrate having a dummy gate; forming source-drain regions in the substrate located in the two sides of the dummy gate, wherein the source-drain region is doped with deuterium; and removing the dummy gate; and forming a gate structure comprising a gate oxide layer in the location of the dummy gate, wherein the deuterium enters the gate oxide layer.