VACUUM TUBE NONVOLATILE MEMORY AND THE METHOD FOR MAKING THE SAME

摘要

The present invention provides a vacuum tube nonvolatile memory and the method of manufacturing it. The vacuum tube nonvolatile memory comprises oxide-nitride-oxide composite structure as gate dielectric layer, wherein the nitride layer can trap charges and provide better insulating block capability between the gate and vacuum channel. The present structure exhibits superior program and erase speed as well as the retention time. It also provides with excellent gate controllability and negligible gate leakage current due to adoption of the gate insulator.

主权项

1. A vacuum tube nonvolatile memory, comprising:
a substrate; a dielectric layer on said substrate; a gate, a source and a drain on said dielectric layer, said source and said drain located at one side of said gate respectively; wherein said gate comprises a vacuum area to expose the sidewalls of said source and said drain; wherein a gate dielectric layer surrounds said vacuum area of said gate; and wherein said gate dielectric layer comprises oxide-nitride-oxide composite layers.