SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device comprises a semiconductor substrate and a semiconductor fin. The semiconductor substrate has an upper surface and a recess extending downwards into the semiconductor substrate from the upper surface. The semiconductor fin is disposed in the recess and extends upwards beyond the upper surface, wherein the semiconductor fin is directly in contact with semiconductor substrate, so as to form at least one semiconductor hetero-interface on a sidewall of the recess.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate, having an upper surface and a recess extending downwards into the semiconductor substrate from the upper surface; and a semiconductor fin, disposed in the recess and extending upwards beyond the upper surface, wherein the semiconductor fin is directly in contact with semiconductor substrate, so as to form at least one semiconductor hetero-interface on a sidewall of the recess; wherein the semiconductor fin comprises a material other than that used to constitute the semiconductor substrate, and the material other than that used to constitute the semiconductor substrate has a germanium (Ge) concentration gradually varied from a bottom surface of the recess to the upper surface.