| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 μm or more. |
| 申请公布号 |
US2017103960(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201615173742 |
申请日期 |
2016.06.06 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
MURATA Daisuke;IMOTO Yuji |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 μm or more. |
| 地址 |
Tokyo JP |
