| 发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A method for manufacturing a semiconductor structure includes: receiving a semiconductive substrate with a post passivation interconnect including an oval landing area; forming a first conductor on the oval landing area; forming a polymer layer above the semiconductive substrate, thereby surrounding a portion of the first conductor; polishing the polymer layer and the first conductor in order to form a planarized surface; and forming a second conductor on the polished first conductor. |
| 申请公布号 |
US2017103955(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201615385100 |
申请日期 |
2016.12.20 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
CHIANG YUNG-PING;SHIH CHAO-WEN;TSAI HAO-YI;LII MIRNG-JI |
| 分类号 |
H01L23/00;H01L21/66 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor structure, comprising:
receiving a semiconductive substrate with a post passivation interconnect (PPI) including an oval landing area; forming a first conductor on the oval landing area; forming a polymer layer above the semiconductive substrate, thereby surrounding a portion of the first conductor; polishing the polymer layer and the first conductor in order to form a planarized surface; and forming a second conductor on the polished first conductor. |
| 地址 |
HSINCHU TW |
