FABRICATION METHOD FOR SEMICONDUCTOR DEVICE

摘要

A fabrication method for a semiconductor device is provided. The fabrication method for a semiconductor device includes a semiconductor chip arraying step of arraying a plurality of semiconductor chips at given distances on a first face of a substrate that serves as a supporting body, a substrate thinning step of grinding a second face of the substrate at the side opposite to the first face to thin the substrate to a given thickness, a through electrode formation step of forming a through-hole that extends from the second face side to the semiconductor chip at a given position of the thinned substrate and embedding metal into the through-hole to form a through electrode, and a wiring layer formation step of forming a wiring layer at the second face side of the substrate.

主权项

1. A fabrication method for a semiconductor device, comprising:
a semiconductor chip arraying step of arraying a plurality of semiconductor chips at given distances on a first face of a substrate that serves as a supporting body; a substrate thinning step of grinding a second face of the substrate at the side opposite to the first face to thin the substrate to a given thickness; a through electrode formation step of forming a through-hole that extends from the second face side to the semiconductor chip at a given position of the thinned substrate and embedding metal into the through-hole to form a through electrode; and a wiring layer formation step of forming a wiring layer at the second face side of the substrate.