METHOD FOR MANUFACTURE OF A SEMICONDUCTOR WAFER SUITABLE FOR THE MANUFACTURE OF AN SOI SUBSTRATE, AND SOI SUBSTRATE WAFER THUS OBTAINED

摘要

A semiconductor wafer suitable for fabricating an SOI substrate is provided by: producing a first layer of polycrystalline semiconductor on a top side of a semiconductor carrier; then forming an interface zone on a top side of the first layer, wherein the interface zone has a structure different from a crystal structure of the first layer; and then producing a second layer of polycrystalline semiconductor on the interface zone.

主权项

1. Process for producing a silicon-on-insulator substrate, including:
producing a carrier substrate, and producing a semiconductor film located on top of a buried insulating layer itself located on top of the carrier substrate, wherein producing the carrier substrate comprises producing, on one side of a semiconductor carrier, a stack located between said semiconductor carrier and said buried insulating layer and including at least one initial structure, wherein producing said at least one initial structure comprises the following successive steps: producing, on said one side of said semiconductor carrier, a first layer of polycrystalline semiconductor; forming an interface zone on a top side of said first layer, said interface zone having a structure different from a crystal structure of said first layer; and producing, on said interface zone, a second layer of polycrystalline semiconductor.