DIODE LASER FOR WAFER HEATING FOR EPI PROCESSES

摘要

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

主权项

1. A process chamber, comprising:
a first dome; a second dome; a substrate support disposed between the first dome and the second dome; a first plurality of heating elements disposed over the first dome, wherein the first dome is disposed between the first plurality of heating elements and the substrate support; and a spot heating source assembly disposed over the first dome, wherein the spot heating source assembly comprises a radiant spot heating source pointed at the substrate support.