Deposited Material and Method of Formation

摘要

A system and method for manufacturing a semiconductor device is provided. An embodiment comprises forming a deposited layer using an atomic layer deposition (ALD) process. The ALD process may utilize a first precursor for a first time period, a first purge for a second time period longer than the first time period, a second precursor for a third time period longer than the first time period, and a second purge for a fourth time period longer than the third time period.

主权项

1. A semiconductor device comprising:
an opening through a silicon 6-doping layer, an InAlAs layer, an InP etch stop layer, and a n++ InGaAs layer; a gate dielectric material within the opening, wherein the gate dielectric material comprises:
a first layer comprising a first material, the first layer comprising a first plurality of monolayers, the first plurality of monolayers having a first density;a second layer over and in physical contact with the first layer, the second layer comprising the first material, the second layer comprising a second plurality of monolayers, the second plurality of monolayers having a second density less than the first density; anda third layer over and in physical contact with the second layer, the third layer comprising the first material and comprising a third plurality of monolayers, the third plurality of monolayers having a third density greater than the second density; and a gate electrode over the gate dielectric material.