发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device according to embodiments described below includes an element region and a peripheral region. The element region is disposed on a substrate and semiconductor elements are collocated in the element region. The peripheral region is disposed on the substrate and surrounds the element region. The element region extends in a first direction parallel to the substrate and includes a plurality of wiring layers laminated on the substrate. The peripheral region includes a peripheral layer arranged to surround the element region. The peripheral layer includes a first part extending in the first direction and a second part extending in a second direction intersecting the first direction. The cross-section structures of the first part and the second part are different from one another.
申请公布号 US2017103995(A1) 申请公布日期 2017.04.13
申请号 US201615071463 申请日期 2016.03.16
申请人 Kabushiki Kaisha Toshiba 发明人 HATANO Masaaki;MATSUURA Osamu
分类号 H01L27/115;H01L23/58;H01L29/06;H01L23/00;H01L23/528;H01L23/532 主分类号 H01L27/115
代理机构 代理人
主权项 1. A semiconductor device comprising: an element region disposed on a substrate, semiconductor elements being collocated in the element region; and a peripheral region disposed on the substrate, the peripheral region surrounding the element region, wherein the element region extends in a first direction parallel to the substrate and includes a plurality of wiring layers laminated on the substrate, the peripheral region includes a peripheral layer arranged to surround the element region, the peripheral layer includes a first part extending in the first direction and a second part extending in a second direction intersecting the first direction, and the first part and the second part have mutually different cross-section structures.
地址 Minato-ku JP