| 发明名称 |
RADIO-FREQUENCY ISOLATION USING FRONT SIDE OPENING |
| 摘要 |
A transistor device includes a transistor implemented over a semiconductor substrate, one or more dielectric layers formed over the transistor, and a handle wafer layer disposed on at least a portion of the one or more dielectric layers, the handle wafer layer including a topside trench defined at least in part by sidewall portions of the handle wafer layer. |
| 申请公布号 |
US2017104540(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201615386987 |
申请日期 |
2016.12.21 |
| 申请人 |
SKYWORKS SOLUTIONS, INC. |
发明人 |
MASON Jerod F.;BARTLE Dylan Charles;WHITEFIELD David Scott |
| 分类号 |
H04B10/40;H01L23/00;H01L21/762;H01L27/12 |
主分类号 |
H04B10/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor device comprising:
a transistor implemented over a semiconductor substrate; one or more dielectric layers formed over the transistor; and a handle wafer layer disposed on at least a portion of the one or more dielectric layers, the handle wafer layer including a topside trench defined at least in part by sidewall portions of the handle wafer layer. |
| 地址 |
Woburn MA US |
