MANUFACTURE OF A CDHGTE MULTISPECTRAL PHOTODIODE ARRAY BY CADMIUM DIFFUSION

摘要

A method for manufacturing a multi-spectral photodiode array in a CdxHg1-xTe semiconductor layer constituted of pixels, the method including a step of producing a PN junction in each pixel and further includes producing a cadmium-rich structure on the semiconductor layer, structured so that all the pixels are not surmounted by a same quantity of cadmium atoms, this quantity being able to be zero; and inter-diffusion annealing, realising the diffusion of cadmium atoms from the cadmium-rich structure to the semiconductor layer. Pixels that do not all have the same cutoff wavelength are thereby obtained.

主权项

1. A method for manufacturing a multispectral photodiode array in a CdxHg1-xTe semiconductor layer constituted of juxtaposed regions called pixels, the method comprising a step of producing a PN junction in each pixel, wherein the following steps, implemented at least once:
deposition of cadmium-rich material on the CdxHg1-xTe semiconductor layer, the cadmium-rich material having a cadmium concentration greater than that of the semiconductor layer; then inter-diffusion annealing, realising the diffusion of cadmium atoms from the cadmium-rich material to the semiconductor layer; at least one step of deposition of cadmium-rich material forming a step of producing a cadmium-rich structure, the cadmium-rich structure being structured so that all the pixels of the semiconductor layer are not surmounted by a same quantity of cadmium atoms, this quantity being able to be zero; and at least one inter-diffusion annealing being adapted so that at the end of this at least one annealing, all the pixels do not have the same cutoff wavelength.