发明名称 SEMICONDUCTOR APPARATUS, STACKED SEMICONDUCTOR APPARATUS, ENCAPSULATED STACKED-SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.
申请公布号 US2017103932(A1) 申请公布日期 2017.04.13
申请号 US201515126172 申请日期 2015.03.12
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 TAKEMURA Katsuya;SOGA Kyoko;ASAI Satoshi;KONDO Kazunori;SUGO Michihiro;KATO Hideto
分类号 H01L23/12;C23C14/34;C23C14/58;C25D3/60;C25D7/12;C25D5/02;C25D5/54;C25D5/48;B23K1/00;H01L21/02;B29C70/88;B29C70/78;H01L23/498;H01L23/31;H01L25/065;H01L21/48;H01L21/56;C23C14/04 主分类号 H01L23/12
代理机构 代理人
主权项
地址 Tokyo JP
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