| 发明名称 |
SPACER FOR TRENCH EPITAXIAL STRUCTURES |
| 摘要 |
The disclosure relates to a structure and methods of forming spacers for trench epitaxial structures. The method includes: forming a spacer material between source and drain regions of respective first-type gate structures and second-type gate structures; growing source and drain material about the first-type gate structures, confined within an area defined by the spacer material; and growing source and drain material about the second-type gate structures, confined within an area defined by the spacer material. |
| 申请公布号 |
US2017103984(A1) |
申请公布日期 |
2017.04.13 |
| 申请号 |
US201514880658 |
申请日期 |
2015.10.12 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Ok Injo;Pranatharthiharan Balasubramanian;Seo Soon-Cheon;Surisetty Charan V.V.S. |
| 分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a spacer material between source and drain regions of respective first-type gate structures and second-type gate structures; growing source and drain material about the first-type gate structures, confined within an area defined by the spacer material; and growing source and drain material about the second-type gate structures, confined within an area defined by the spacer material. |
| 地址 |
Armonk NY US |
