MEMORY DEVICE BASED ON DOMAIN WALL MEMORY AND READING AND WRITING METHOD THEREOF, AND APPARATUS FOR DIGITAL SIGNAL PROCESSING USING THE SAME

摘要

At least one magnetic nanowire including multiple cells; a write-read head combined with a first contact of the magnetic nanowire; and a read-only head combined with a second contact of the magnetic nanowire. Data stored through a write head included in the write-read head are read in sequence through a read head included in the write-read head in response to a last in first out (LIFO) method.

主权项

1. A memory device based on a domain wall memory comprising:
at least one magnetic nanowire including multiple cells; a write-read head combined with a first contact of the magnetic nanowire; and a read-only head combined with a second contact of the magnetic nanowire, wherein data stored through a write head included in the write-read head are read in sequence through a read head included in the write-read head in response to a last in first out (LIFO) method, and wherein data stored in cells included between the first contact and a first side end of the magnetic nanowire are stored in sequence into cells included between the second contact and a cell located just before the first contact through a read operation in response to the LIFO method.