发明名称 Semiconductor Device and Driving Method Thereof, and Electronic Device
摘要 A driving method of a semiconductor device for compensating variation in threshold voltage and mobility of a transistor is provided. A driving method of a semiconductor device including a transistor and a capacitor electrically connected to a gate of the transistor includes a first period where voltage corresponding to threshold voltage of the transistor is held in the capacitor, a second period where a total voltage of video signal voltage and threshold voltage is held in the capacitor holding the threshold voltage, and a third period where charge held in the capacitor in accordance with the total voltage of the video signal voltage and the threshold voltage in the second period is discharged through the transistor.
申请公布号 US2017103704(A1) 申请公布日期 2017.04.13
申请号 US201615299511 申请日期 2016.10.21
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 KIMURA Hajime
分类号 G09G3/3233 主分类号 G09G3/3233
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP