SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a gate structure over a first surface of the substrate, and a source region and a drain region in the substrate adjacent to the gate structure. The semiconductor structure further comprises a channel region interposing the source and drain regions and underlying the gate structure. The semiconductor structure further comprises a first layer over a second surface of the substrate opposite to the first surface, and a second layer over the first layer. The semiconductor structure further comprises a sensing film over the channel region and at least a portion of the first and second layers, and a well over the sensing film and cutting off the first layer and the second layer.

主权项

1. A semiconductor structure, comprising:
a substrate; a gate structure over a first surface of the substrate; a source region and a drain region in the substrate adjacent to the gate structure; a channel region interposing the source and drain regions and underlying the gate structure; a first layer over a second surface of the substrate opposite to the first surface; a second layer over the first layer; a sensing film over the channel region and at least a portion of the first and second layers; and a well over the sensing film, the well being defined by a first opening in the first layer and a second opening in the second layer, wherein a width of the first opening is greater than a width of the second opening.