发明名称 COATED SOLDER MATERIAL AND METHOD FOR PRODUCING SAME
摘要 The present invention provides a coated solder material that is capable of preventing the advancement of oxidation of the surface during long-term storage and when melted, and that has excellent wetting extendability and bondability, without the occurrence of gaps in the bonded areas. A coating film is formed on the surface of a solder material; the coating film including a carbon compound that is formed by introducing an organic compound having a carbon number of 8 or less together with a carrier gas into a reaction gas that has been plasmatized under atmospheric pressure, and after a radicalized organic compound has been formed by radicalizing the organic compound, causing the radicalized organic compound to react with the metal on the surface of the solder material; the thickness of the coating film is 4 nm to 200 nm, and when heated at 150° C. to 300° C. and melted, the mass-reduction rate is 60% or greater.
申请公布号 US2017100802(A1) 申请公布日期 2017.04.13
申请号 US201515128181 申请日期 2015.03.24
申请人 SUMITOMO METAL MINING CO., LTD. 发明人 KOBAYASHI Hiroshi;YAMABE Hidetoshi;MIYAUCHI Kyoko
分类号 B23K35/02;B23K35/30;C23C16/50;B23K35/36;C23C16/26;B23K35/26;B23K35/28 主分类号 B23K35/02
代理机构 代理人
主权项 1. A coated solder material comprising; a solder material including a metal and having a surface, and a coating film formed on the surface of the solder material; the coating film including a carbon compound that is formed by introducing an organic compound having a carbon number of 8 or less together with a carrier gas into a reaction gas that has been plasmatized under atmospheric pressure, and then after a radicalized organic compound has been formed by radicalizing the organic compound, causing the radicalized organic compound to react with the metal on the surface of the solder material to form the carbon compound; and the coating film having a thickness of 4 nm to 200 nm, and a mass-reduction rate is 60% or greater after the coating film is heated at 150° C. to 300° C. and melted.
地址 TOKYO JP
您可能感兴趣的专利