Method of adjusting spacer thickness to provide variable threshold voltages in FinFETs

摘要

A method of adjusting work-function metal thickness includes providing a semiconductor structure having a substrate, the substrate including a first array of fins formed thereon. First spacers are formed having a first spacer thickness on sidewalls of fins of the first array. The thickness of the first spacers is adjusted to provide a second spacer thickness different from the first spacer thickness. First supports are formed between and adjacent the first spacers. The first spacers are removed to form first WF metal trenches defined by the fins of the first array and the first supports. A gate is formed extending laterally across the fins of the first array. First WF metal structures are disposed within the first WF metal trenches within the gate.

主权项

1. A method comprising:
providing a semiconductor structure having a substrate, the substrate including a first array of fins formed thereon; forming first spacers having a first spacer thickness on sidewalls of fins of the first array; adjusting the thickness of the first spacers to provide a second spacer thickness different from the first spacer thickness; forming first supports between and adjacent the first spacers; removing the first spacers to form first WF metal trenches defined by the fins of the first array and the first supports; forming a gate extending laterally across the fins of the first array; and disposing first WF metal structures within the first WF metal trenches within the gate.