Composite spacer enabling uniform doping in recessed fin devices

摘要

A semiconductor device that includes at least one fin structure and a gate structure present on a channel portion of the fin structure. An epitaxial semiconductor material is present on at least one of a source region portion and a drain region portion on the fin structure. The epitaxial semiconductor material includes a first portion having a substantially conformal thickness on a lower portion of the fin structure sidewall and a second portion having a substantially diamond shape that is present on an upper surface of the source portion and drain portion of the fin structure. A spacer present on first portion of the epitaxial semiconductor material.

主权项

1. A method of forming a semiconductor device comprising:
forming an inner spacer layer on source and drain portions of a fin structure and a gate structure that is present on the channel portion of the fin structure; forming an outer spacer layer on the inner spacer layer; removing a portion of the outer spacer layer to expose a portion of the inner spacer layer that is present on an upper surface of the source and drain portions of the fin structure, wherein a remaining portion of the outer spacer layer is present overlying sidewalls of the lower surface of the source and drain portions of the fin structure; removing the inner spacer layer selectively to the remaining portion of the outer spacer layer to exposed said sidewalls of the lower surface of the source and drain portions of the fin structure; and forming doped epitaxial semiconductor material on the lower surface of the source and drain portions of the fin structures.