Field-effect transistor with two-dimensional channel realized with lateral heterostructures based on hybridized graphene

摘要

The invention is a field-effect transistor with a channel consisting of a thin sheet of one or more atomic layers of lateral heterostructures based on hybridized graphene. The role of lateral heterostructures is to modify the energy gap in the channel so as to enable the effective operation of the transistor in all bias regions. This solution solves the problem of the missing bandgap in single-layer and multi-layer graphene, which does not allow the fabrication of transistors that can be efficiently switched off. The possibility of fabricating lateral heterostructures, with patterns of domains with different energy dispersion relations, enables the realization of field-effect transistors with additional functionalities with respect to common transistors.

主权项

1. A field effect transistor comprising a source, a two-dimensional channel, a drain and a gate, arranged in such a way that charge carriers flowing through said two-dimensional channel from said source to said drain define a longitudinal direction of said two-dimensional channel, wherein said two-dimensional channel comprises a lateral heterostructure consisting in the intercalation of mono- or multi-atomic layer graphene domains, and a domain of a different material compatible with graphene, wherein the domain of the different material is arranged in such a way that:
charge carriers flowing from said source to said drain in said longitudinal direction must flow through said domain of said different material; and said domain of said different material acts as a barrier controlled by said gate against said charge carriers flowing from said source to said drain in said longitudinal direction.