发明名称 Method of fabricating a micro device transfer head
摘要 A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.
申请公布号 US9620478(B2) 申请公布日期 2017.04.11
申请号 US201213372292 申请日期 2012.02.13
申请人 Apple Inc. 发明人 Bibl Andreas;Higginson John A.;Law Hung-Fai Stephen;Hu Hsin-Hua
分类号 H01L21/00;H01L23/00;H01L21/67;H01L21/683;B32B37/00;B32B37/06 主分类号 H01L21/00
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A method of fabricating an array of electrostatic transfer heads comprising: forming an array of mesa structures on a base substrate, each mesa structure including sidewalls; forming a passivation layer over the base substrate and the array of mesa structures, wherein forming the passivation over the base substrate and the array of mesa structures comprises a technique selected from the group consisting of conformal deposition of the passivation layer over the base substrate and the array of mesa structures and growing the passivation layer over the base substrate and the array of mesa structures; forming a separate electrode directly on the passivation layer and over each corresponding mesa structure such that each electrode is electrically insulated from each corresponding mesa structure; and depositing a dielectric layer over the array of mesa structures and each electrode.
地址 Cupertino CA US