| 发明名称 | Electronic component | ||
| 摘要 | In an embodiment, a semiconductor device includes a lateral transistor device having an upper metallization layer. The upper metallization layer includes n elongated pad regions. Adjacent ones of the n elongated pad regions are coupled to different current electrodes of the lateral transistor device. The n elongated pad regions bound n−1 active regions of the lateral transistor where n≧3. | ||
| 申请公布号 | US9620467(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201514855462 | 申请日期 | 2015.09.16 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Haeberlen Oliver;Otremba Ralf;Prechtl Gerhard;Schiess Klaus |
| 分类号 | H01L23/482;H01L23/00;H01L23/528 | 主分类号 | H01L23/482 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor device, comprising a lateral transistor device comprising an upper metallization layer, the upper metallization layer comprising n elongated pad regions, adjacent ones of the elongated pad regions being coupled to different current electrodes of the lateral transistor device, the n elongated pad regions bounding n-1 active regions of the lateral transistor, wherein n≧3, and wherein each of the active regions is uncovered by the upper metallization layer between the adjacent ones of the elongated pad regions. | ||
| 地址 | Villach AT | ||