Semiconductor structure including a layer of a first metal between a diffusion barrier layer and a second metal and method for the formation thereof

摘要

A method includes providing a semiconductor structure including a recess. The recess includes at least one of a contact via and a trench. A layer of a first metal is deposited over the semiconductor structure. An electroless deposition process is performed. The electroless deposition process removes a first portion of the layer of first metal from the semiconductor structure and deposits a first layer of a second metal over the semiconductor structure. An electroplating process is performed. The electroplating process deposits a second layer of the second metal over the first layer of second metal. A second portion of the layer of first metal remains in the semiconductor structure.

主权项

1. A method, comprising:
providing a semiconductor structure comprising a recess, said recess comprising at least one of a contact via and a trench; depositing a layer of a first metal over said semiconductor structure, said layer of a first metal having a passivation layer comprising an oxide of said first metal disposed thereon; performing an electroless deposition process, said electroless deposition process removing said passivation layer, removing a first portion of said layer of said first metal from said semiconductor structure, and depositing a first layer of a second metal over said semiconductor structure; and performing an electroplating process, said electroplating process depositing a second layer of said second metal over said first layer of said second metal; wherein a second portion of said layer of said first metal remains in said semiconductor structure.