发明名称 |
Apparatus for processing substrate for supplying reaction gas having phase difference |
摘要 |
Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, a substrate holder on which the one ore more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, and a gas supply unit disposed inside the external reaction tube to supply a reaction gas into the process space, the gas supply unit forming a flow of the reaction gas having different phase differences in a vertical direction. |
申请公布号 |
US9620395(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201214357628 |
申请日期 |
2012.11.16 |
申请人 |
EUGENE TECHNOLOGY CO., LTD. |
发明人 |
Yang Il-Kwang;Je Sung-Tae;Song Byoung-Gyu;Kim Yong-Ki;Kim Kyong-Hun;Shin Yang-Sik |
分类号 |
H01L21/67;C23C16/44;C23C16/455;C23C16/458;H01L21/677;C30B35/00;H01L21/02 |
主分类号 |
H01L21/67 |
代理机构 |
Rabin & Berdo, P.C. |
代理人 |
Rabin & Berdo, P.C. |
主权项 |
1. A substrate processing apparatus in which processes with respect to substrates are performed, the substrate processing apparatus comprising:
a lower chamber having an opened upper side, the lower chamber comprising a passage allowing the substrates to pass therethrough in a side thereof; an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed; a substrate holder on which the substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked and a process position in which the processes with respect to the substrates are performed; and a gas supply unit disposed inside the external reaction tube to supply a reaction gas into the process space, wherein the gas supply unit comprises: a plurality of supply nozzles disposed along an inner wall of the external reaction tube, the plurality of supply nozzles having a plurality of supply holes for discharging the reaction gas; and a plurality of exhaust nozzles disposed along the inner wall of the external reaction tube, the plurality of exhaust nozzles having a plurality of exhaust holes for suctioning an non-reaction gas and byproducts within the process space, wherein the plurality of supply holes are disposed in an inner wall of the external reaction tube to have a phase difference in a circumference direction of the external reaction tube from each other and to be located at a different height from each other, wherein the plurality of exhaust holes are disposed in the inner wall of the external reaction tube to have a phase difference in a circumference direction of the external reaction tube from each other and to be located at a different height from each other, wherein each of the supply holes is disposed at a same height as a corresponding one of the exhaust holes, and a center of each of the supply holes is symmetric to a center of the corresponding one of the exhaust holes with respect to a center of the external reaction tube, and wherein the gas supply unit forms a flow of the reaction gas to have a phase difference in a vertical direction. |
地址 |
Yongin-si, Gyeonggi-do KR |