Sputter source for semiconductor process chambers

摘要

Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.

主权项

1. A sputter source for a semiconductor process chamber, comprising:
a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface, wherein the target has a central axis normal to the back surface of the target and comprises a ring extending downward and having a top portion and a bottom portion and a hp extending radially inward from and perpendicular to the top portion; a first set of outer magnets disposed proximate a back surface of the ring and arranged symmetrically with respect to the central axis; and a second set of outer magnets disposed proximate a back surface of the lip and arranged symmetrically with respect to the central axis, wherein the target comprises; a first annular groove formed in the back surface of the ring directly opposing and aligned with the first set of outer magnets to reduce a magnetic permeability of a first region of the target proximate the first set of outer magnets; and a second annular groove formed in the back surface of the lip directly opposing and aligned with the second set of outer magnets to reduce a magnetic permeability of a second region of the target proximate the second set of outer magnets, wherein each of the first and second annular grooves is an unfilled v-shaped groove having an inner angle greater than 90 degrees, and wherein the front surface of the ring is perpendicular to the front surface of the lip so that the target has a substantially L-shaped cross section.