| 主权项 |
1. Self-referenced magnetic random access memory (MRAM) cell comprising a magnetic tunnel junction including a sense layer; a storage layer having a storage magnetization; a tunnel barrier layer comprised between the sense and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature;
said sense layer comprising a first sense layer having a first sense magnetization, a second sense layer having a second sense magnetization and spacer layer between the first and second sense layers, the spacer layer being a metal layer which introduces a Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling, and wherein either, the dimension of the magnetic tunnel junction along the first and second sense magnetization, is larger than 100 nm and the spacer layer has a thickness greater than 2 nm such that said RKKY coupling is below the magnetic coupling required for antiferromagnetic SAF coupling between the first and second sense layers; or, the dimension of the magnetic tunnel junction along the first and second sense magnetization, is smaller than 100 nm and the spacer layer has a thickness between 1 nm and 2 nm such that RKKY coupling is a parallel coupling counterbalancing dipolar coupling between the first and second sense layer. |
