发明名称 Array substrate for liquid crystal display device and method of fabricating the same
摘要 A liquid crystal display device includes an array substrate and a color filter substrate, a plurality of gate lines and a plurality of data lines formed on the array substrate such that the gate lines and the data lines intersect each other to define a plurality of pixel regions, a plurality of thin film transistors formed at respective intersections of the gate lines and the data lines, a liquid crystal layer interposed between the array and color filter substrates, and a plurality of repair patterns formed on the first substrate. Each of the plurality of the repair patterns crosses a corresponding one of the data lines, and is along and adjacent to a corresponding one of the gate lines, such that the repair pattern includes protruding ends that protrude from the corresponding data line to repair a defect on the pixel regions.
申请公布号 US9618816(B2) 申请公布日期 2017.04.11
申请号 US201514706540 申请日期 2015.05.07
申请人 LG Display Co., Ltd. 发明人 Lee Sang-Hyup;Lee Jin-Seok
分类号 G02F1/13;G02F1/1362;H01L27/12;G02F1/136 主分类号 G02F1/13
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A method of repairing an array substrate having a defect for a liquid crystal display device, comprising: forming a gate line including first and second gate lines on a substrate, wherein the second gate lines is branched from the first gate line to form a two-way path structure for the gate line; forming a data line crossing the gate line to form a crossing portion, thereby defining first to fourth pixel regions arranged in a matrix shape; forming a thin film transistor in the second pixel region and connected to the gate and date lines; forming a pixel electrode in the second pixel region and connected to the thin film transistor; and irradiating a laser beam onto the crossing portion of the gate and data lines such that the data line is electrically disconnected from the first gate line, and the pixel electrode is electrically disconnected from the thin film transistor, respectively, when an electrical short is generated at an overlapped portion of the gate and data lines.
地址 Seoul KR