Method and apparatus for testing IC

摘要

A testing method includes measuring an electrical parameter of a device under test (DUT) and a corresponding temperature of the DUT one or more times, determining coefficients in a pre-constructed model based on a plurality of measured values of the electrical parameter and corresponding measured temperatures to characterize a relationship of the electrical parameter to the temperature, and determining a quality of the DUT based on the model and a limit value of the electrical parameter at a specified temperature. The model is pre-constructed to characterize the relationship of the electrical parameter to the temperature with the coefficients that are DUT-dependent variables.

主权项

1. A method, comprising:
measuring an electrical parameter of a device under test (DUT) and measuring, using a temperature sensor, a corresponding temperature of the DUT one or more times; determining coefficients, in a pre-constructed model based on a plurality of measured values of the electrical parameter and corresponding measured temperatures, to characterize a relationship of the electrical parameter of the DUT to the temperature of the DUT, wherein
the pre-constructed model characterizes a relationship of the electrical parameter to the temperature of a circuit type corresponding to the DUT, andthe coefficients are DUT-dependent variables of the DUT; and determining a fitness of the DUT to meet a specified performance requirement based on the pre-constructed model and a limit value of the electrical parameter at a specified temperature.