Fin field effect transistor and method for fabricating the same

摘要

A FinFET including a substrate, a plurality of isolators, a gate stack, and strained material portions is provided. The substrate includes at least two fins thereon. The isolators are disposed on the substrate, and each of the insulators between the fins has a recess profile. The gate stack is disposed over portions of the fins and over the insulators. The strained material portions cover the fins revealed by the gate stack. In addition, a method for fabricating the FinFET is provided.

主权项

1. A fin field effect transistor (FinFET), comprising:
a substrate having at least two fins thereon; a plurality of isolators disposed on the substrate, each of the isolators between the fins comprising a recess profile, wherein each of the isolators having the recess profile comprises a first protruded portion and a second protruded portion respectively with a rounded top portion and a bottom portion being wider than the rounded top portion, and; a gate stack, disposed over portions of the fins and over the isolators; and strained material portions covering the fins revealed by the gate stack.