Circuit for driving sense amplifier of semiconductor memory device and operating method thereof

摘要

A circuit for driving a sense amplifier of a semiconductor memory device is provided. The circuit includes a first driving circuit configured to supply a current from a power node to a first driving node of the sense amplifier based on a first driving control signal, a source control circuit configured to generate a control signal based on a second driving control signal and a voltage of the drain node, and a second driving circuit configured to draw current from a second driving node of the sense amplifier to a ground node based on the control signal.

主权项

1. A semiconductor memory device, comprising:
a sense amplifier; and a sense amplifier driving circuit configured to drive the sense amplifier in response to first and second driving control signals, wherein the sense amplifier driving circuit comprises: a first driving circuit configured to supply current from a power node to a first driving node of the sense amplifier in response to the first driving control signal; a second driving circuit configured to draw current from a second driving node of the sense amplifier and output the drawn current to a ground node in response to the second driving control signal; and a control circuit configured to generate a control signal to control at least one of an operation of the first driving circuit in response to a voltage on the second driving node and an operation of the second driving circuit in response to a voltage on the first driving node.