Solid-state image pickup device and method for producing the same

摘要

A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

主权项

1. A solid-state image pickup device comprising:
a semiconductor substrate; a plurality of pixels respectively having a photoelectric conversion element formed in the semiconductor substrate; an element isolation insulating film configured to electrically isolate adjacent ones of the plurality of pixels, the element isolation insulating film being formed on a surface of the semiconductor substrate; and a first isolation diffusion configured to electrically isolate the adjacent ones of the plurality of pixels, the first isolation diffusion being formed under a portion of the element isolation insulating film having a first thickness, wherein a part of the first isolation diffusion adjacent to the photoelectric conversion element has mixed impurities and the part of the first isolation diffusion having the mixed impurities is located entirely beneath the portion of the element isolation insulating film having the first thickness.