| 发明名称 | Method for manufacturing silicon carbide semiconductor device | ||
| 摘要 | A method for manufacturing a silicon carbide semiconductor device includes the following steps. There is prepared a first silicon carbide layer having a first main surface and a second main surface. A first recess including a side portion and a bottom portion is formed in the first main surface of the first silicon carbide layer. A second silicon carbide layer is formed in contact with the first main surface, the side portion, and the bottom portion. An image of a second recess formed at a position facing the first recess of the fourth main surface is obtained. Alignment is performed based on the image of the second recess. The first main surface corresponds to a plane angled off relative to a {0001} plane. A ratio obtained by dividing a depth of the first recess by a thickness of the second silicon carbide layer is more than 0.2. | ||
| 申请公布号 | US9620358(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201414892972 | 申请日期 | 2014.05.08 |
| 申请人 | Sumitomo Electric Industries, Ltd. | 发明人 | Tamaso Hideto |
| 分类号 | H01L21/02;H01L21/027;H01L29/16;H01L23/544;H01L29/66;H01L29/04;H01L21/66;H01L29/40;H01L21/00;H01L29/78;H01L29/06 | 主分类号 | H01L21/02 |
| 代理机构 | Venable LLP | 代理人 | Venable LLP ;Sartori Michael A.;Riggs F. Brock |
| 主权项 | 1. A method for manufacturing a silicon carbide semiconductor device, comprising steps of: preparing a first silicon carbide layer having a first main surface and a second main surface opposite to said first main surface; forming a first recess in said first main surface of said first silicon carbide layer, said first recess including a side portion continuously connected to said first main surface and a bottom portion continuously connected to said side portion; forming a second silicon carbide layer in contact with said first main surface, said side portion, and said bottom portion, said second silicon carbide layer having a third main surface in contact with said first main surface and a fourth main surface opposite to said third main surface; obtaining an image of a second recess formed in said fourth main surface at a position facing said first recess; and performing alignment based on said image of said second recess, said first main surface corresponding to a plane angled off relative to a {0001} plane such that a normal line vector of said first main surface has at least one of components of <11-20> and <1-100>, a ratio obtained by dividing a depth of said first recess by a thickness of said second silicon carbide layer being more than 0.2. | ||
| 地址 | Osaka-shi JP | ||