Coherent spin field effect transistor

摘要

A voltage switchable coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A chrome oxide layer is formed on the cobalt by MBE at room at UHV at room temperature. There was thin cobalt oxide interface between the chrome oxide and the cobalt. Other magnetic materials may be employed. A few ML field of graphene is deposited on the chrome oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.

主权项

1. A coherent spin field effect transistor (coherent spin-FET) comprising a ferromagnetic base layer or gate, a chrome oxide layer overlaying said base layer, a layer of graphene deposited over said chrome oxide layer, a separated source and drain both in electrical contact with said graphene layer, wherein polarization of ions in layers within said chrome oxide layer overlaying said base layer and adjacent said graphene layer is ferromagnetic within the layers wherein the ferromagnetic gate has an axis of magnetic polarization that is easily switchable and has a low coercive field and is ferromagnetic at 24° C.