发明名称 Systems and methods for improving deposition rate uniformity and reducing defects in substrate processing systems
摘要 Systems and methods for delivering liquid precursor in a substrate processing system include supplying liquid precursor using a first valve in fluid communication with a liquid precursor source; supplying purge gas using a second valve in fluid communication with a purge gas source; arranging a third valve having a first input port in fluid communication with an output port of the first valve and a second input port in fluid communication with an output port of the second valve; arranging an input port of a first divert injector valve in fluid communication with an output port of the third valve; and operating the first valve, the second valve, the third valve and the first divert injector valve in first, second, third and fourth modes.
申请公布号 US9617637(B2) 申请公布日期 2017.04.11
申请号 US201414331704 申请日期 2014.07.15
申请人 LAM RESEARCH CORPORATION 发明人 Dhas Arul;Kelley Brannon;Guiliani Jaswinder;Singhal Akhil
分类号 C23C16/50;H01J37/00;H01L21/00;C23C16/455;C23C16/52 主分类号 C23C16/50
代理机构 代理人
主权项 1. A method for delivering liquid precursor in a substrate processing system, comprising: supplying liquid precursor using a first valve in fluid communication with a liquid precursor source; supplying purge gas using a second valve in fluid communication with a purge gas source; arranging a third valve having a first input port and a second input port independent of the first input port, wherein the first input port is in fluid communication with an output port of the first valve and the second input port is in fluid communication with an output port of the second valve, and wherein the third valve is arranged to selectively supply either one of (i) liquid precursor received via the first valve through the first input port or (ii) purge gas received via the second valve through the second input port; arranging an input port of a first divert injector valve in fluid communication with an output port of the third valve; and operating the first valve, the second valve, the third valve and the first divert injector valve in first, second, third and fourth modes, when there is no request for liquid precursor, configuring in the first mode and closing the first valve, opening the second valve to supply the purge gas to the second input port of the third valve, supplying the purge gas with the third valve and opening the first divert injector valve, in response to a request for liquid precursor, configuring sequentially in the second mode, the third mode and the fourth mode, wherein configuring in the second mode includes keeping the first valve closed, closing the second valve to stop the supply of purge gas to the third valve, and closing the third valve and the first divert injector valve to trap the purge gas in a conduit between the third valve and the first divert injector valve,wherein configuring in the third mode includes, immediately subsequent to the second mode, keeping the first valve, the second valve, and the third valve closed and opening the first divert injector valve to allow the purge gas trapped in the second mode to flow out of the conduit, andwherein configuring in the fourth mode includes opening the first valve to supply the liquid precursor to the first input port of the third valve, keeping the second valve closed, opening the third valve to supply the liquid precursor using the third valve and closing the first divert injector valve.
地址 Fremont CA US