Dual layer microelectromechanical systems device and method of manufacturing same

摘要

Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.

主权项

1. A method comprising:
providing a substrate having a first semiconductor material layer, a second semiconductor material layer, and an insulator layer between the first and second semiconductor material layers; processing the first semiconductor material layer to form a first structure layer of a MEMS device, wherein processing the first semiconductor material layer to form the first structure layer includes:
forming a first trench within the first semiconductor material layer;forming a dielectric material layer within the first trench; andforming a first conductive layer within the first trench; and processing the second semiconductor material layer to form a second structure layer of the MEMS device; and removing the first conductive layer from the first trench prior to processing the second semiconductor material layer.