PECVD films for EUV lithography

摘要

Provided herein are multi-layer stacks for use in extreme ultraviolet lithography tailored to achieve optimum etch contrast to shrink features and smooth the edges of features while enabling use of an optical leveling sensor with little or reduced error. The multi-layer stacks may include an atomically smooth layer with an average local roughness of less than a monolayer, and one or more underlayers, which may be between a target layer to be patterned and a photoresist. Also provided are methods of depositing multi-layer stacks for use in extreme ultraviolet lithography.

主权项

1. A multi-layer stack on a semiconductor substrate for extreme ultraviolet lithography comprising:
an atomically smooth layer with an average local roughness of less than a monolayer, and one or more underlayers, wherein the one or more underlayers have high etch contrast to layers adjacent to them, and wherein one of the one or more underlayers comprises amorphous silicon having a hydrogen content less than about 5%.