Method for improved growth of two-dimensional transition metal dichalcogenides

摘要

Processes for controlling the growth and thickness of two-dimensional transition metal dichalcogenides are provided. The process modifies an insulator substrate surface with an electron or ion beam to create charged areas on the substrate surface. The treated surface allows for hydroxylation of the charged species which serves as nucleation sites for the seed particles during chemical vapor deposition that promotes growth of thin layers of transition metal dichalcogenides.

主权项

1. A method for controlled growth of transition metal dichalcogenides (TMD) comprising
applying an electron or focused ion beam to an insulator surface to produce a charged area; exposing the insulator surface to water molecules wherein the charged area comprises hydroxyl groups; and depositing the TMD at a thickness of about 0.7 nm to 2.1 nm on said insulator surface using a chemical vapor deposition process.