Field-effect transistors having black phosphorus channel and methods of making the same

摘要

A field-effect transistor (FET) includes a black phosphorus (BP) layer over a substrate. The BP layer includes channel, source, and drain regions. The FET further includes a passivation layer over and in direct contact with the BP layer. The passivation layer provides first and second openings over the source and drain regions respectively. The FET further includes source and drain contacts in direct contact with the source and drain regions through the first and second openings. The FET further includes a gate electrode over the channel region. In an embodiment, the passivation layer further includes a third opening over the channel region and the FET further includes a gate dielectric layer in direct contact with the channel region through the third opening. Methods of making the FET are also disclosed.

主权项

1. A method of forming a field effect transistor (FET), comprising:
forming a black phosphorus (BP) layer over a substrate; without breaking vacuum, forming a first layer over the BP layer; forming a gate stack over the first layer; forming an inter-layer dielectric (ILD) layer over the first layer and the gate stack; etching the ILD layer to form first openings thereby exposing first portions of the first layer; removing the first portions of the first layer in the first openings to expose the BP layer; and without breaking vacuum subsequent to the removing of the first portions of the first layer in the first openings, depositing a metal in the first openings to be in direct contact with the BP layer.