发明名称 |
CNT thin film transistor with high K polymeric dielectric |
摘要 |
A thin film transistor (TFT) has a gate electrode; a gate insulation layer, a semiconducting channel separated from the gate electrode by the gate insulation layer; a source electrode and a drain electrode. The gate insulation layer is a cross-linked cyanoethylated polyhydroxy polymer, e.g. a cross-linked cyanoethylated pullulan, having a high dielectric constant and the semiconducting channel has a network of semiconducting carbon nanotubes. The semiconducting channel is adhered to the gate insulation layer through a polymeric material. The carbon nanotubes adhere to the polymeric material and the polymeric material reacts or interacts with the gate insulation layer. TFTs have high mobilities while maintaining good on/off ratios. |
申请公布号 |
US9620728(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201514609806 |
申请日期 |
2015.01.30 |
申请人 |
National Research Council of Canada |
发明人 |
Du Naiying;Malenfant Patrick;Li Zhao;Lefebvre Jacques;Dubey Girjesh;Lopinski Gregory;Zou Shan |
分类号 |
H01L29/06;H01L51/05;H01L51/00 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
Lemay Catherine |
主权项 |
1. A thin film transistor comprising: a gate electrode; a gate insulation layer comprising a cyanoethylated polyhydroxy polymer cross-linked by a cross-linker and adhered to the gate electrode; a polymeric material that reacts or interacts with the gate insulation layer; a semiconducting channel comprising a network of semiconducting carbon nanotubes adhered to the polymeric material and separated from the gate electrode by the gate insulation layer; a source electrode; and, a drain electrode wherein the polymeric material comprises a layer of a polyamino acid, a polymer with a pendant amine group, a polymer with a pendant amino silane group, a polyvinylphenol or any blend thereof, between the gate insulation layer and the semiconducting channel. |
地址 |
Ottawa, Ontario CA |