Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element

摘要

According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory element including: a semiconductor substrate including: a source region; a drain region; and a channel region; a lower insulating film that is formed on the channel region; a charge storage film that is formed on the lower insulating film and that stores data; an upper insulating film that is formed on the charge storage film; and a control gate that is formed on the upper insulating film, wherein the upper insulating film includes: a first insulting film; and a second insulating film that is laminated with the first insulating film, and wherein the first insulating film is formed to have a trap level density larger than that of the second insulating film.

主权项

1. A memory comprising:
a semiconductor substrate; a lower electrode disposed above the semiconductor substrate; an insulating film disposed on the lower electrode; and an upper electrode disposed on the insulating film; wherein the insulating film includes:
a first insulating film including Al oxide or Al oxynitride and having a thickness of 0.5 nm to 4 nm;a second insulating film disposed on the first insulating film and including Zr oxide; anda third insulating film disposed on the second insulating film and including Al oxide or Al oxynitride;wherein a thickness of the first insulating film is less than a thickness of the second insulating film.