| 发明名称 | Semiconductor device structure and method | ||
| 摘要 | A multi-layered semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor layer, a first insulator layer, a second semiconductor layer, a second insulator layer, and a third semiconductor layer are formed over a substrate. A first transistor comprises the first semiconductor layer, the first insulator layer, and the second semiconductor layer, and a second transistor comprises the second semiconductor layer, the second insulator layer, and the third semiconductor layer. | ||
| 申请公布号 | US9620605(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201514713978 | 申请日期 | 2015.05.15 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd.;National Taiwan University | 发明人 | Liang Chi-Te;Hong Minghwei;Liu Fan-Hung |
| 分类号 | H01L29/43;H01L29/423;H01L29/778;H01L29/66 | 主分类号 | H01L29/43 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A semiconductor device comprising: a first semiconductor layer over a substrate; a first insulator layer over the first semiconductor layer, wherein the first insulator layer comprises a first single-crystal material; a second semiconductor layer over the first insulator layer, wherein the first semiconductor layer, the first insulator layer, and the second semiconductor layer form a first transistor; a second insulator layer over the second semiconductor layer; and a third semiconductor layer over the second insulator layer, wherein the second semiconductor layer, the second insulator layer, and the third semiconductor layer form a second transistor over the first transistor. | ||
| 地址 | Hsin-Chu TW | ||