Backside illuminated image sensor structure

摘要

Backside illuminated image sensor structures are provided. The backside illuminated image sensor structure includes a device substrate having a frontside and a backside and pixels formed at the frontside of the substrate. The backside illuminated image sensor structure further includes a metal element formed in a dielectric layer over the backside of the substrate and a color filter layer formed over the dielectric layer. In addition, the metal element is configured to form a light blocking area in the device substrate and is made of copper.

主权项

1. A backside illuminated image sensor structure comprising:
a device substrate having a frontside and a backside; a plurality of pixels formed at the frontside of the device substrate and exposed from the backside of the device substrate; a dielectric layer formed on the backside of the device substrate and in direct contact with the pixels; a metal element embedded in the dielectric layer; and a color filter layer formed over the dielectric layer, wherein the metal element is made of copper and is in direct contact with the device substrate.