Semiconductor device and method of manufacturing the same

摘要

The present disclosure may provide a semiconductor device with an enhanced integration. The device may include a lower pipe gate; an upper pipe gate including a first horizontal portion and first and second protrusions, the first horizontal portion being parallel to the lower pipe gate, the first and second protrusions extending from the first horizontal portion to the lower pipe gate and crossing each other so as to define a pipe channel region; a partition pipe gate disposed between the lower and upper pipe gates, the partition pipe gate dividing the pipe channel region into first and second pipe channel regions; and first and second pipe channel films disposed respectively in the first and second pipe channel regions.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a first conductive film having first trenches formed therein, each of the first trenches extending in a first direction; forming a first sacrificial film filling the first trenches; etching the first sacrificial film to form second trenches, each second trench extending in the first direction; forming a second conductive film and a second sacrificial film on the second conductive film, the second conductive film being formed on an inner surface of each of the second trenches, and the second sacrificial film filling each of the second trenches; forming first slits dividing the first sacrificial film, the second conductive film and the second sacrificial film into a plurality of base patterns; forming a third conductive film having a horizontal portion covering the base patterns and protrusions extending from the horizontal portion so as to fill the first slits; and forming a pair of first holes and a pair of second holes, the first holes passing through the horizontal portion so as to expose the first sacrificial film of each of the base patterns, and the second holes passing through the horizontal portion so as to expose the second sacrificial film of each of the base patterns.